Electrochemical Plating

Discover ACM’s Electrochemical Plating (ECP) Capabilities

Do your chipsets destined for 5G or electric vehicle applications call for copper deposition on a dual-damascene structure at nodes ranging from 55nm down to 14nm and beyond? Do you need a high-speed copper-plating solution for filling TSVs in interposers or 3D IC stacks? Perhaps your SiC device needs gold (Au) plating with better step coverage and greater uniformity. If so, you’ve come to the right place.

One ECP Platform Supports All Your Plating Needs

Whether you’re plating thick or thin film Cu, Ni, SnAg, or gold, and whether you’re filling vias or creating pillars, bumps, or redistribution layers, the tool you choose for your ECP applications will have an impact on the quality and electrical performance of your final product.

Our Ultra ECP product line does it all, from dual-damascene and through-silicon vias (TSVs) in front-end wafer fab processes to interconnect metal plating used in wafer-level packaging and compound semiconductor manufacturing. Our patented plating technologies include multizone anodes for superior uniformity control, rubber-seal plating chucks for superior sealing, partial pulse plating for pattern structure filling, vacuum pre-wetting of wafers, and paddle technologies.

Supplemental ECP Technical Resources:

White Paper: Highly Uniform Cu Film Deposition by Electrochemical Methods
White Paper: Optimization of Film Uniformity by Electrochemical Copper Deposition Chamber Design