Plating System — Ultra ECP map

For dual-dual damascene applications, copper metal plating is product dependent and has a major impact on yield and reliability. Major process features include filling, metal thickness and thickness uniformity; with film properties, defects, impurities also key process indicators of ECP process performance.

Building on our proven Electro-Chemical-Plating (ECP) technology, the Ultra ECP map is configured with ACM’s exclusive Multi-Anode Partial Plating function, which allows the deposition of the copper metal layer on a dual-damascene structure, which is compatible for 55nm/40nm/28nm/14nm applications and beyond.

ACM has numerous patents, awarded and pending, in many areas of plating technology—such as multizone anodes for superior uniformity control, rubber-seal plating chucks for superior sealing, partial pulse plating for pattern structure filling, etc.

Main Benefits

• Partial pulse plating technology
• Independent module design
• Compatible with ultra-thin seed layer
• High throughput and uptime
• Lower cost of consumables and cost of ownership
• Extends to Cu plating application

Features & Specifications

• System for 300mm wafers
• Up to 3 Load Ports
• Up to 4 plating chambers with partial pulse plating system
• Up to 4 cleaning chambers
• Up to 8 anneal chambers
• Plating uniformity: WIWNU < 1.5%, WTWNU < 1.5%