Plating Systems—Ultra ECP G-III

ACM’s electrochemical plating systems (developed since 1998) offer processing equipment for Cu, Ni,Sn/Ag and Au plating, as well as vacuum pre-wet and post-clean modules. The Ultra ECP GIII plating tool can support interconnect metal and wafer level packaging (WLP) for compound semiconductors, with product offerings for silicon carbide (SiC), galluium nitride (GaN) and gallium arsenide (GaAs). ACM’s high speed plating technology is also capable of plating gold (Au) into backside deep hole processes with better step coverage and  greater uniformity . The tool features a fully-automated platform to support high volume manufacturing that accommodates both flat and notched 6-inch wafers, and incorporates ACM’s proprietary second anode power and paddle technologies for optimal performance.

ACM’s Ultra ECP GIII tool leverages two key technologies to achieve performance benefits: ACM’s high speed plating technology (paddle technology) and ACM’s second anode technology. ACM’s second anode technology delivers superior uniformity control by effectively tuning wafer-level plating performance to overcome issues created by electrical field distribution differences. It can be used to optimize big die at wafer edge area patterns and notch area to achieve plating uniformity within 3%.

for Cu-Ni-SnAg

Major Benefits

Cu plating chambers:

• High speed plating technology
• Separate anode chamber with membrane
• Soluble Cu anode

Sn/Ag plating chambers:

• Separate anode chamber with membrane
• Soluble Sn anode and inert anode optional
• Contact ring plate-out auto-detection

Ni plating chambers:

• Separate anode chamber with membrane
• Soluble Ni anode
• In-line rinse heating up to avoid crystallization

Automated additive dosing （option）

The additives of each electrolyte tank can be dosed automatically, controlled by amperage and/or bath time. Dosing pump and bottle volume are also recorded for timely refilling of the additive bottle.

Features & Specifications

• Notch type and flat type wafer compatible （need to replace chuck）
• Main hardware configuration:
  • 2 open cassettes
  • EFEM with aligner and robot
  • 1 pre-wet chambers, vacuum type
  • 1 cleaning chambers
  • 7 plating chambers: Cu, Sn/Ag, Ni
• Process capabilities:
  • Uniformity: <5% (max-min/2 average)
  • Within-die uniformity: <3%
  • Wafer-to-wafer uniformity: <3%
  • Repeatability: <2%
  • COP: <10%

for Au

Major Benefits

Au plating chambers:

• With paddle technology for better step coverage in deep via plating
• N2 protection from electrolyte oxidation
• In-line rinse heating up to avoid crystallization

Automated additive dosing （option）

The additives of each electrolyte tank can be dosed automatically, controlled by amperage and/or bath time. Dosing pump and bottle volume are also recorded for timely refilling of the additive bottle.

Features & Specifications

• Notch type and flat type wafer compatible （need to replace chuck）
• Main hardware configuration:
  • 2 open cassettes
  • EFEM with aligner and robot
  • 1 pre-wet chambers, vacuum type
  • 1 cleaning chambers
  • 6 plating chambers: Au
• Process capabilities:
  • Uniformity: <5% (max-min/2 average)
  • Within-die uniformity: <3%
  • Wafer-to-wafer uniformity: <3%
  • Repeatability: <2%
  • COP: <10% （for Au bump）