Cleaning Systems—Ultra SiC Cleaning Tool

While silicon carbide (SiC) wafers are harder than silicon, they are more fragile and require special handling. Our Ultra C SiC Substrate Cleaning Tool was designed specifically to support these delicate substrates. 

The platform leverages our patented Space Alternated Phase Shift (SAPS) cleaning technology which is designed to achieve more comprehensive cleaning without damage to device features. It uses SC1 (ammonia/hydrogen peroxide), SC2 (hydrochloric acid/hydrogen peroxide), diluted hydrofluoric acid (DHF) and other chemicals for the silicon carbide cleaning process, and can also be equipped with our proprietary binary two-fluid nozzles.  The tool is 6- and 8-inch compatible and is designed to achieve throughput of more than 70 wafers per hour.  

Major Benefits of Ultra SiC Substrate Cleaning Tool

• Supports both 6 and 8” substrate sizes  
• Supports wafers up to 250–350-micron thickness  
• Configurable based on customer requirements 
• Mechanically assisted materials removal  
• Supports SC1, SC2, DHF, and SPM cleaning chemistries to remove surface particles, metals.   

Features and Specifications of Ultra SiC Cleaning Tool

• 4, 8, and 12 Chambers available 
• 6” and 8” cassettes available  
• CDS system for chemical distribution  
• A single robot equipped with four arms to handle multiple silicon wafers  
• SAPS Megasonics 1MHZ 
• N2 spin dry 
• LPD > 0.3µm <=10 ea 
• Metal Level <5E10